Manufacturer
|
INFINEON TECHNOLOGIES | |
Type of transistor
|
N-MOSFET | |
Technology
|
HEXFET® | |
Polarisation
|
unipolar | |
Drain-source voltage
|
55V | |
Drain current
|
30A | |
Pulsed drain current
|
160A | |
Power dissipation
|
110W | |
Case
|
DPAK | |
Gate-source voltage
|
±16V | |
On-state resistance
|
27mΩ | |
Mounting
|
SMD | |
Gate charge
|
48nC | |
Kind of package
|
reel | |
Kind of channel
|
enhanced | |
Features of semiconductor devices
|
logic level |